Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor

Surface morphology of Al0.3Ga0.7N/Al2O3-high electron mobility transistor structure.

We present surface properties of buffer films (AIN and GaN) and Al0.3Gao.zN/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AIN interlayer grown on High Temperature (HT)-AIN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 10(8)-10(9) cm(-2). The AFM measurements a...

MOCVD growth of GaN-based high electron mobility transistor structures

High-Mobility Nanotube Transistor Memory

A high-mobility (9000 cm2/V‚s) semiconducting single-walled nanotube transistor is used to construct a nonvolatile charge-storage memory element operating at room temperature. Charges are stored by application of a few volts across the silicon dioxide dielectric between nanotube and silicon substrate, and detected by threshold shift of the nanotube field-effect transistor. The high mobility of ...

Hydrogen sensing properties of a metamorphic high electron mobility transistor

transistor Tsung-Han Tsai, Huey-Ing Chen, Chung-Fu Chang, Po-Shun Chiu, Yi-Chun Liu, Li-Yang Chen, Tzu-Pin Chen, and Wen-Chau Liu Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China Department of Chemical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101...

Investigation of Hot Electrons and Hot Phonons Generated within an AlN/GaN High Electron Mobility Transistor

We review our recent results obtained on an AlN/GaN-based high-electron-mobility transistor. The temperature of the electrons drifting under a relatively-high electric field is significantly higher than the lattice temperature (i.e., the hot electrons are generated). These hot electrons are produced through the Fröhlich interaction between the drifting electrons and long-lived longitudinal-opti...